Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max
Units
Off Characteristics
BV DSS
? BV DSS
? T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = 250 μ A
I D = 250 μ A,Referenced to 25 ° C
50
72
V
mV/ ° C
I DSS
Zero Gate Voltage Drain Current
V DS = 50 V,
V GS = 0 V
0.5
μ A
V DS = 50 V, V GS = 0 V T J = 125 ° C
5
μ A
V DS = 30 V,
V GS = 0 V
100
nA
I GSS
Gate–Body Leakage.
V GS = ± 20 V,
V DS = 0 V
± 100
nA
On Characteristics
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS ,
I D = 1 mA
0.8
1.3
1. 5
V
? V GS(th)
? T J
Gate Threshold Voltage
Temperature Coefficient
I D = 1 mA,Referenced to 25 ° C
–2
mV/ ° C
R DS(on)
I D(on)
Static Drain–Source
On–Resistance
On–State Drain Current
V GS = 10 V, I D = 0.22 A
V GS = 4.5 V, I D = 0.22 A
V GS = 10 V, I D = 0.22 A, T J = 125 ° C
V GS = 10 V, V DS = 5 V
0.2
0.7
1.0
1.1
3.5
6.0
5.8
?
A
g FS
Forward Transconductance
V DS = 10V,
I D = 0.22 A
0.12
0.5
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V,
f = 1.0 MHz
V GS = 0 V,
27
13
6
pF
pF
pF
R G
Gate Resistance
V GS = 15 mV, f = 1.0 MHz
9
?
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 30 V,
V GS = 10 V,
V DS = 25 V,
V GS = 10 V
I D = 0.29 A,
R GEN = 6 ?
I D = 0.22 A,
2.5
9
20
7
1.7
0.1
5
18
36
14
2.4
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
0.4
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Sourc e Diode Forward Current
0.22
A
V SD
Drain–Source Diode Forward
V GS = 0 V,
I S = 0.44 A (Note 2)
0.8
1.4
V
Voltage
Notes:
1.
R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 350°C/W when mounted on a
minimum pad..
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
BSS138 Rev C (W)
相关PDF资料
BSS138DW-7 MOSFET DUAL N-CHAN 50V SC70-6
BSS138K MOSFET N-CH 50V 220MA SOT-23-3
BSS138LT1 MOSFET N-CH 50V 200MA SOT-23
BSS138TC MOSFET N-CHAN 50V SOT23-3
BSS138W-7 MOSFET N-CH 50V 200MA SC70-3
BSS138W MOSFET N-CH 50V 21MA SOT323
BSS84-7 MOSFET P-CH 50V 130MA SOT23-3
BSS84_D87Z MOSFET P-CH 50V 130MA SOT-23
相关代理商/技术参数
BSS138_NL 制造商:Fairchild Semiconductor Corporation 功能描述:Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R
BSS138_Q 功能描述:MOSFET SOT-23 N-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BSS138_SB9G001 制造商:Fairchild Semiconductor Corporation 功能描述:MODE FIELD EFFECT TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:BSS 138 SOT23 FSC
BSS1387 制造商:Diodes Incorporated 功能描述:
BSS138-7 功能描述:MOSFET 60V 360mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BSS138-7-F 功能描述:MOSFET 300mW 50V DSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BSS138-7-F-31 制造商:DIODES 功能描述:N-Channel MOSEFT/ SOT-23(LEAD-FREE)
BSS138AKA 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 0.2A SOT-2 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 60V, 0.2A, SOT-23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 60V, 0.2A, SOT-23, Transistor Polarity:N Channel, Continuous Drain